 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number : ENN7134A FW332 N-Channel and P-Channel Silicon MOSFETs FW332 Motor Driver Applications Preliminary Features * * * Package Dimensions unit : mm 2129 [FW332] 8 5 0.3 4.4 6.0 0.2 5.0 0.595 1.27 0.43 * Low ON-resistance. Ultrahigh-speed switching. Composite type with an N-channel MOSFET and a Pchannel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. 0.1 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg 1.5 1.8max 1 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : SOP8 Conditions Ratings N-channel 30 20 4 P-channel --30 20 --3 --12 1.4 1.7 150 --55 to +150 Unit V V A A W W C C PW10s, duty cycle1% Mounted on a ceramic board (2000mm 2!0.8mm)1unit Mounted on a ceramic board (2000mm2!0.8mm) 16 Electrical Characteristics at Ta=25C Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=4A 30 1 10 1.0 3.7 5.3 2.4 V A A V S Symbol Conditions Ratings min typ max Unit Marking : W332 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1502 TS IM TA-3869 / 11502 TS IM TA-3326 No.7134-1/6 FW332 Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS=16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=-3A ID=--3A, VGS=--10V ID=--1.5A, VGS=-4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=--10V, ID=-3A VDS=--10V, VGS=--10V, ID=-3A VDS=--10V, VGS=--10V, ID=-3A IS=--3A, VGS=0 --30 --1 10 --1.0 2.9 4.2 90 160 370 100 65 8 45 30 31 8.6 1.2 1.8 --0.85 --1.5 115 225 --2.4 V A A V S m m pF pF pF ns ns ns ns nC nC nC V Symbol RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions ID=4A, VGS=10V ID=2A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=4A VDS=10V, VGS=10V, ID=4A VDS=10V, VGS=10V, ID=4A IS=4A, VGS=0 Ratings min typ 55 105 270 90 55 9 80 25 17 7.0 1.3 1.5 0.84 1.2 max 70 145 Unit m m pF pF pF ns ns ns ns nC nC nC V Electrical Connection D1 D1 D2 D2 (Top view) S1 G1 S2 G2 Switching Time Test Circuit [N-channel] VDD=15V VIN 10V 0V VIN PW=10s D.C.1% ID=4A RL=3.75 [P-channel] VDD= --15V VIN 0V --10V VIN PW=10s D.C.1% ID= --3A RL=5 D G VOUT D G VOUT P.G 50 FW332 P.G 50 FW332 S S No.7134-2/6 FW332 4.0 ID -- VDS 5V 8V 6V [Nch] 3.0 ID -- VGS VDS=10V [Nch] 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 4V 2.5 Drain Current, ID -- A Drain Current, ID -- A 10V 2.0 VGS=3V 1.5 Ta= 75C 0 0.5 1.0 1.5 2.0 2.5 1.0 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3.0 3.5 4.0 Drain-to-Source Voltage, VDS -- V 250 IT03321 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 160 25 C --25 C IT03322 [Nch] Ta=25C RDS(on) -- Ta [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 140 120 100 80 60 40 20 0 --60 200 150 2A, I D= =4V VGS 4A ID=2A 100 =10V , V GS I D=4A 50 0 0 1 2 3 4 5 6 7 8 9 10 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 yfs -- ID IT04018 Ambient Temperature, Ta -- C 10 7 5 IT04019 [Nch] VDS=10V IF -- VSD Forward Transfer Admittance, yfs -- S [Nch] VGS=0 7 5 Forward Current, IF -- A 3 2 3 2 2 5C Ta= -- C 25 C 75 1.0 7 5 3 2 0.1 1.0 7 5 3 0.1 2 3 5 7 1.0 2 3 5 IT04020 0 0.2 0.4 Ta=75 C 25C --25C 0.6 0.8 1.0 1.2 1.4 IT03326 Drain Current, ID -- A 2 100 SW Time -- ID [Nch] VDD=15V VGS=10V 1000 7 5 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V [Nch] f=1MHz Switching Time, SW Time -- ns 7 3 2 10 7 5 3 2 1.0 5 7 0.1 2 3 td(off) tf td(on) Ciss, Coss, Crss -- pF 5 3 2 Ciss 100 7 5 3 2 Coss Crss tr 10 5 7 1.0 2 3 5 0 5 10 15 20 25 30 IT03328 Drain Current, ID -- A IT04021 Drain-to-Source Voltage, VDS -- V No.7134-3/6 FW332 10 VGS -- Qg VDS=10V ID=4A [Nch] 3 2 10 7 5 ASO IDP=16A ID=4A [Nch] <10s Gate-to-Source Voltage, VGS -- V 8 10 0 1m s s 10 Drain Current, ID -- A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 6 DC 10 ms 0m op s era tio n 4 Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board(2000mm2!0.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 5 2 0 0 1 2 3 4 5 6 7 8 IT03329 0.01 0.1 Total Gate Charge, Qg -- nC --3.0 ID -- VDS V --6.0 V --8. 0 Drain-to-Source Voltage, VDS -- V --3.0 IT04022 [Pch] ID -- VGS [Pch] VDS= --10V --4 . 0V --10. 0V --5. 0 V --2.5 = --3 VGS .0V --2.5 Drain Current, ID -- A --2.0 Drain Current, ID -- A --2.0 --1.5 --1.5 --1.0 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 IT04025 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V 300 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 300 --25 --0.5 --0.5 Ta= 75C C 25C IT04026 [Pch] Ta=25C RDS(on) -- Ta [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- m 250 Static Drain-to-Source On-State Resistance, RDS(on) -- m 250 --3.0A 200 200 ID= --1.5A 150 150 -I D= , VG 1.5A --4 S= V 100 100 .0 I D= --3 = --10V A, V GS 50 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 IT04028 Gate-to-Source Voltage, VGS -- V 10 yfs -- ID IT04027 --10 7 5 Ambient Temperature, Ta -- C Forward Transfer Admittance, yfs -- S [Pch] VDS= --10V IF -- VSD [Pch] VGS=0 7 5 Forward Current, IF -- A 3 2 3 2 Ta= --25 C 75 C 25 C --1.0 C --0.4 --0.5 --0.6 7 5 3 2 --0.1 --0.3 1.0 7 5 3 --0.1 2 3 5 7 --1.0 2 3 5 IT04029 Ta=7 5 --0.7 --0.8 --25C --0.9 25C --1.0 --1.1 --1.2 Drain Current, ID -- A Diode Forward Voltage, VSD -- V IT04030 No.7134-4/6 FW332 100 7 SW Time -- ID td(off) [Pch] 1000 7 5 Ciss, Coss, Crss -- VDS [Pch] f=1MHz Switching Time, SW Time -- ns 5 3 2 Ciss tf Ciss, Coss, Crss -- pF 3 2 tr 10 7 5 3 2 1.0 --0.1 td(on) 100 7 5 3 2 Coss Crss VDD= --15V VGS= --10V 2 3 5 7 --1.0 2 3 5 7 10 0 --5 --10 --15 --20 --25 --30 IT04032 Drain Current, ID -- A --10 IT04031 VGS -- Qg Drain-to-Source Voltage, VDS -- V 3 2 --10 7 5 [Pch] ASO [Pch] Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --3A --8 IDP= --12A ID= --3A <10s 10 1m 0s s Drain Current, ID -- A 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 DC --6 10 op era tio ms 0m s --4 Operation in this area is limited by RDS(on). n --2 0 0 1 2 3 4 5 6 7 8 9 10 --0.01 --0.1 Ta=25C Single pulse Mounted on a ceramic board(2000mm2!0.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 Total Gate Charge, Qg -- nC IT04033 2.0 Allowable Power Dissipation(FET 1), PD -- W 1.6 1.4 1.2 PD(FET 1) -- PD(FET 2) [Nch, Pch] M ou Drain-to-Source Voltage, VDS -- V IT04034 PD -- Ta [Nch, Pch] Mounted on a ceramic board(2000mm2!0.8mm) Allowable Power Dissipation, PD -- W nt ed on 1.7 1.6 1.4 1.2 ac era m ic bo To t 1u 0.8 ard al (2 di 00 ss ip 0m m2 !0 0.8 nit ati on .8m 0.4 m ) 0.4 0 0 0.4 0.8 1.2 1.4 1.6 0 0 20 40 60 80 100 120 140 160 Allowable Power Dissipation(FET 2), PD -- W IT04023 Ambient Temperature, Ta -- C IT04024 No.7134-5/6 |
Price & Availability of FW332
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |